Deep Dry Etching of Silicon with Scallop Size Uniformly Larger than 300 nm
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-9948-3.pdf
Reference16 articles.
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3. Roxhed N, Griss P, Stemme G (2007) A method for tapered deep reactive ion etching using a modified Bosch process. J Micromech Microeng 17:1087–1092
4. Choi CH, Kim CJ (2006) Fabrication of a dense array of tall nanostructures over a large sample area with sidewall profile and tip sharpness control. Nanotechnology 17:5326–5333
5. Kim GH, Lee BH, Im H, Jeon SB, Kim D et al (2016) Controlled anisotropic wetting of scalloped silicon nanogroove. RSC Adv 6:41914–41918
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