Laser Induced Stress Wave Thermometry for In-Situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer Part II – Experimental Results-Reference-Cited by-同舟云学术

Laser Induced Stress Wave Thermometry for In-Situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer Part II – Experimental Results

Published:2010-10-09 Issue:7 Volume:51 Page:1115-1122
ISSN:0014-4851
Container-title:Experimental Mechanics
language:en
Short-container-title:Exp Mech

Author:

Vedantham V.,Suh C. S.,Chona R.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Aerospace Engineering

Link

http://link.springer.com/content/pdf/10.1007/s11340-010-9414-7.pdf

Reference8 articles.

1. Rabroker GA (2000) Laser induced stress wave thermometry applied to silicon wafer processing, M.S. Thesis, Texas A&M University, May

2. Qi X, Suh CS (2009) Ultrafast laser induced elastodynamics in single crystalline silicon - part I: model formulation. J Therm Stresses 32:477–493

3. Qi X, Suh CS (2009) Ultrafast laser induced elastodynamics in single crystalline silicon - part II: near-field response. J Therm Stresses 32:494–511

4. Aussel JD, Le Brun A, Baboux JC (1988) Generating acoustic waves by laser: theoretical and experimental study of the emission source. Ultrasonics 26:245–255

5. Rabroker GA, Suh CS, Chona R (2005) Laser induced stress wave thermometry applied to silicon wafer processing: modeling and experimentation. Exp Mech 45(1):3–8

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