Author:
Hou Y.,Liu J. R.,Buchanan M.,Thorpe A. J. Spring,Poole P. J.,Liu H. C.,Wu Ke,Roorda Sjoerd,Zhang X. P.
Abstract
Abstract
We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched InGaAs grown on InP. Under a 1.55 μm multi-mode InGaAs/InGaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. R. Kohler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti and F. Rossi, Nature 417, 156 (2002). http://dx.doi.org/10.1038/417156a
2. S. Fathololoumi, E. Dupont, C. W. I. Chan, Z. R. Wasilewski, S. R. Laframboise, D. Ban, A. Matyas, C. Jirauscheck, Q. Hu and H. C. Liu, Optics Express, in press.
3. J. M. Dai, J. Liu and X. C. Zhang, IEEE J. Sel. Top. Quant. Electron. 17, 183 (2011). http://dx.doi.org/10.1109/JSTQE.2010.2047007
4. K. Kawase, J. Shikata and H. Ito, J. Phys. D: Appl. Phys. 35, R1 (2001). http://dx.doi.org/10.1088/0022-3727/35/3/201
5. W. Shi, Y. J. Ding, N. Fernelius and K. Vodopyanov, Opt. Lett. 27, 1454 (2002). http://dx.doi.org/10.1364/OL.27.001454
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