Defect passivation on cast-mono crystalline screen-printed cells-Reference-Cited by-同舟云学术

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Defect passivation on cast-mono crystalline screen-printed cells

Published:2016-11-19 Issue:1 Volume:11 Page:60-66
ISSN:2095-1701
Container-title:Frontiers in Energy
language:en
Short-container-title:Front. Energy

Author:

Wenham Alison,Song Lihui,Abbott Malcolm,Zafirovska Iskra,Wang Sisi,Hallam Brett,Chan Catherine,Barnett Allen,Wenham Stuart

Publisher

Springer Science and Business Media LLC

Subject

Energy Engineering and Power Technology

Link

http://link.springer.com/content/pdf/10.1007/s11708-016-0443-5.pdf

Reference36 articles.

1. Takahashi I, Usami N, Kutsukake K, Stokkan G, Morishita K, Nakajima K. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed. Journal of Crystal Growth, 2010, 312(7): 897–901

2. Yang K, Schwuttke G H, Ciszek T F. Structural and electrical characterization of crystallographic defects in silicon ribbons. Journal of Crystal Growth, 1980, 50(1): 301–310

3. Gu X, Yu X, Guo K, Chen L, Wang D, Yang D. Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: towards high efficiency and low cost silicon solar cells. Solar Energy Materials and Solar Cells, 2012, 101(2): 95–101

4. Breitenstein O, Rakotoniaina J P, Al Rifai M H, Werner M. Shunt types in crystalline silicon solar cells. Progress in Photovoltaics: Research and Applications, 2004, 12(7): 529–538

5. Hanoka J, Bell O. Electron-beam-induced currents in semiconductors. Annual Review of Materials Science, 1981, 11(1): 353–380

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