Strain-induced Type-I to Type-II transition in Janus ZrIBr/MgClBr heterostructure: a DFT study
Author:
Funder
Knowledge Consortium of Gujarat
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10751-024-01929-7.pdf
Reference19 articles.
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2. Simulation, A.F.: Stacking-Mediated Type-I / Type-II Transition in, (2022)
3. Lee, Y., Hwang, Y., Chung, Y.C.: Achieving type i, ii, and iii heterojunctions using functionalized mxene. ACS Appl. Mater. Interfaces. 7, 7163–7169 (2015). https://doi.org/10.1021/acsami.5b00063
4. Kaewmeechai, C., Laosiritaworn, Y., Jaroenjittichai, A.P.: DFT band alignment of polar and nonpolar GaN/MgGeN2, ZnO/MgGeN2 and GaN/ZnO heterostructures for optoelectronic device design. Appl. Surf. Sci. 533 (2020). https://doi.org/10.1016/j.apsusc.2020.147503
5. Lee, G.-H., Yu, Y.-J., Cui, X., Petrone, N., Lee, C.-H., Choi, M.S., Lee, D.-Y., Lee, C., Yoo, W.J., Watanabe, K., Taniguchi, T., Nuckolls, C., Kim, P., Hone, J.: Flexible and transparent MoS2 field-effect transistors on Hexagonal Boron Nitride-Graphene heterostructures. ACS Nano. 7, 7931–7936 (2013). https://doi.org/10.1021/nn402954e
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