Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition
Author:
Funder
Army Research Office
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-09641-1.pdf
Reference67 articles.
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4. Yates L, Anderson J, Gu X, Lee C, Bai TY, Mecklenburg M, Aoki T, Goorsky MS, Kuball M, Piner EL, Graham S (2018) Low thermal boundary resistance interfaces for GaN-on-diamond devices. ACS Appl Mater Int 10:24302–24309. https://doi.org/10.1021/acsami.8b07014
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