Interfacial reactions of crystalline Ni and amorphous SiC thin films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s10853-018-1986-0/fulltext.html
Reference49 articles.
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2. Casady JB, Johnson RW (1996) Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid-State Elec 39:1409–1422
3. Daves W, Krauss A, Behnel N, Häublein V, Bauer A, Frey L (2011) Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications. Thin Solid Films 519:5892–5898
4. Dinh T, Dao DV, Phan HP, Wang L, Qamar A, Nguyen NT, Tanner P, Rybachuk M (2015) Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature. Appl Phys Express 8:061303-1–061303-4
5. Digdaya IA, Han L, Buijs TWF, Zeman M, Dam B, Smets AHM, Smith WA (2015) Extracting large photovoltages from a-SiC photocathodes with an amorphous TiO2 front surface field layer for solar hydrogen evolution. Energy Environ Sci 8:1585–1593
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