Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature-Reference-Cited by-同舟云学术

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Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Published:2015-05-26 Issue:6 Volume:8 Page:061303
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Dinh Toan,Dao Dzung Viet,Phan Hoang-Phuong,Wang Li,Qamar Afzaal,Nguyen Nam-Trung,Tanner Philip,Rybachuk Maksym

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=6/a=061303/pdf

Reference28 articles.

1. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

2. Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications

3. Piezoresistive Effect of p-Type Single Crystalline 3C-SiC Thin Film

4. Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

5. Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

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