Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-023-08724-9.pdf
Reference71 articles.
1. Scappucci G, Kloeffel C, Zwanenburg FA, Loss D, Myronov M, Zhang J-J, De Franceschi S, Katsaros G, Veldhorst M (2021) The germanium quantum information route. Nat Rev Mater 6(10):926–943
2. Hussain, Muhammad Mustafa, (ed) (2019) Advanced nanoelectronics: post-silicon materials and devices. Wiley
3. Wu Heng, Nathan Conrad, Wei Luo, Ye Peide D (2014) First experimental demonstration of Ge CMOS circuits. In: 2014 IEEE international electron devices meeting, pp 9–3
4. Dobbie A, Myronov M, Morris RJH, Hassan AHA, Prest MJ, Shah VA, Parker EHC, Whall TE, Leadley DR (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Appl Phys Lett 101(17):172108
5. Watzinger H, Kukučka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J-J, Katsaros G (2018) A germanium hole spin qubit. Nat Commun 9(1):1–6
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