Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD-Reference-Cited by-同舟云学术

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Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD

Published:2017-06-06 Issue:18 Volume:52 Page:10879-10885
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Kennon E. L.,Orzali T.,Xin Y.,Vert A.,Lind A. G.,Jones K. S.

Funder

Applied Materials

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/article/10.1007/s10853-017-1254-8/fulltext.html

Reference18 articles.

1. del Alamo JA (2011) Nanometre-scale electronics with III–V compound semiconductors. Nature 479:317–323. doi: 10.1038/nature10677

2. 2013 International Technology Roadmap for Semiconductors (ITRS). http://www.itrs2.net/2013-itrs.html . Accessed 22 Feb 2015

3. 2011 International Technology Roadmap for Semiconductors (ITRS). http://www.itrs2.net/2011-itrs.html . Accessed 21 Jun 2016

4. Baraskar A, Gossard AC, Rodwell MJW (2013) Lower limits to metal-semiconductor contact resistance: theoretical models and experimental data. J Appl Phys 114:154516. doi: 10.1063/1.4826205

5. Pearton SJ (1993) Ion implantation in III–V semiconductor technology. Int J Mod Phys B 7:4687–4761

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method;Crystals;2022-12-16

2. Dopant-defect interactions in highly doped epitaxial Si:P thin films;Thin Solid Films;2019-09

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