Electric current-restrained crack propagation in brittle GaN ceramics
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-020-05692-2.pdf
Reference33 articles.
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2. Latorre-Rey AD, Sabatti FFM, Albrecht JD, Saraniti M (2017) Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors. Appl Phys Lett 111:013506
3. Zheng JS, Li E, Cui Z, Ma DM, Wang XL (2020) Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS(2)trilayer vdW heterostructure. J Mater Sci 55:14074
4. Bykhovski AD, Kaminski VV, Shur MS, Chen QC, Khan MA (1996) Piezoresistive effect in wurtzite n-type GaN. Appl Phys Lett 68:818–819
5. Wang CH, Liao WS, Ku NJ, Li YC, Chen YC, Tu LW, Liu CP (2014) Effects of free carriers on piezoelectric nanogenerators and piezotronic devices made of GaN nanowire arrays. Small 10:4718–4725
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