A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE-Reference-Cited by-同舟云学术

A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

Published:1993-12 Issue:12 Volume:22 Page:1375-1381
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Maracas G. N.,Shiralagi K.,Ramamurti R.,Carpenter R. W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02649980.pdf

Reference38 articles.

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4. S. Tehrani, A.D. van Rheenen, M. Hoogstra, J.A. Curless and M.S. Peffley,IEEE Trans. Electron Dev. 39, 1070 (1992).

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