Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing-Reference-Cited by-同舟云学术

Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing

Published:2015-03-22 Issue:3 Volume:22 Page:761-767
ISSN:1380-2224
Container-title:Journal of Porous Materials
language:en
Short-container-title:J Porous Mater

Author:

Hu Wenbo,Zhao Xiaolei,Fan Jinlong,Wu Shengli,Zhang Jingtao

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10934-015-9949-1.pdf

Reference21 articles.

1. W.K. Yue, D.L. Parker, M.H. Weichold, Technical Digest-International Electron Devices Meeting, California. USA, 167 (1990)

2. H. Kim, J.-W. Park, J.-W. Lee, Y.-H. Lee, B.-K. Ju, M.-H. Oh, Y.-H. Song, J.-H. Lee, K.-I. Cho, J. Jang, Society for Information Display 2002 Inernational Symposium, Boston, USA, 365 (2002)

3. I.-H. Jang, J.E. Kim, G.-H. Ryu, S.-Y. Choi, Mol. Cryst. Liq. Cryst. 499, 160 (2009)

4. T. Ichihara, T. Hatai, N. Koshida, J. SID 18(3), 223 (2010)

5. N. Mori, H. Minari, S. Uno, H. Mizuta, N. Koshida, Appl. Phys. Lett. 98, 062104 (2011)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emission Property;IEEE Transactions on Electron Devices;2024-04

2. Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing;Materials Research;2020

3. The mechanism of the electrochemical oxidation in the constant current mode of the porous silicon;Materials Research Express;2019-07-03

4. Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching;Journal of Electronic Materials;2016-10-14