Comparison of the Thermal Expansion Behavior of Several Intermetallic Silicide Alloys Between 293 and 1523 K

Author:

Raj S. V.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference20 articles.

1. K.N. Tu and J.W. Mayer, Silicide Formation, Thin Films: Interdiffusion and Reactions, J.M. Poate, K.N. Tu and J.W. Mayer, Ed., Wiley, New York, 1978, p 359-405

2. S.P. Murarka, Silicides for VLSI, Applications, Academic Press, New York, NY, 1983

3. J.P. Gambino and E.P. Colgan, Silicide and Ohmic Contacts, Mater. Chem. Phys., 1998, 52, p 99–146

4. L. Miglio and F.M. D’Heurle, Eds., Silicides: Fundamentals and Applications, Proc. 16th Course of the Intern. School of Sol. Stat. Phys., Erice, Italy, June 5-16, 1999, World Scientific, Washington, DC, 2000

5. L.J. Chen, Metal Silicides: An Integral Part of Microelectronics, JOM, 2004, 57, p 24–30

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