1. C.H.Gooch: GaAs Lasers (Wiley Interscience, London 1969)
2. For cw operation of (GaAl)As DH lasers Zh.I.Alferov, V.M.Andreev, D.Z.Garbuzov, Yu.V.Zhilgae, E.P.Morozov, E.L.Portnoi, V.G.Trofim: Fiz. Tekh. Poluprow4, 1826 (1970) I.Hayashi, M.B.Panish, P.W.Foy, S.Sumski: Appl. Phys. Letters17, 109 (1970) P.R.Selway, A.R.Goodwin, C.M.Phillips: 4th Annual. Conf. Solid State Devices (1970) I.Sakuma, H.Yonezu, K.Nishida, K.Kobayashi, H.Saito, Y.Nannichi: Japan. J. Appl. Phys.10, 282 (1971)
3. For general reviews of (GaAl)As DH lasers M.B.Panaish, I.Hayashi: Heterostructure junction lasers, inApplied Solid State Science, Vol. 4 (Academic Press, New York 1974), pp. 236–328
4. J.E.Ripper, J.C.Dyment, L.AD'Asaro, T.L.Paoli: Appl. Phys. Letters18, 155 (1971)
5. H.Yonezu, I.Sakuma, T.Kamejima, M.Ueno, K.Nishida, Y.Nannichi, I.Hayashi: Appl. Phys. Letters24, 18 (1974) H.Yonezu, I.Sakuma, T.Kamejima, M. Ueno, K.Kobayashi, N.Nishida, Y.Nannichi, I.Hayashi: Degadation of AlxGa1−xAs double heterostructure lasers, in Proc. 1973 Intern. Conf. Solid State Devices, Tokyo (1973), pp. 59–62; and Digest of Technical Papers, pp. 59–60