Optical determination of free carriers parameters in an epitaxial GaAs layer-Reference-Cited by-同舟云学术

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Optical determination of free carriers parameters in an epitaxial GaAs layer

Published:1976-01 Issue:1 Volume:9 Page:47-51
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Azéma A.,Botineau J.,Gires F.,Saïssy A.,Vanneste C.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00901908.pdf

Reference10 articles.

1. R.A. Smith:Semiconductors (Cambridge University Press, Cambridge 1961)

2. J.C. Slater:Insulators, Semiconductors and Metals, Vol. 3 (McGraw-Hill, New York 1967)

3. S.M. Sze:Physics of Semiconductor Devices (Wiley and Sons Inc., New York 1969)

4. N.S. Kapany, J.J. Burke:Optical Waveguides (Academic Press, New York 1972)

5. D. Marcuse:Integrated Optics (IEEE Press, New York 1973)

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. REFERENCES;Optical Bistability: Controlling Light with Light;1985

2. Surface recombination velocity in a silicon optical waveguide;Applied Physics A Solids and Surfaces;1983-05

3. Photoinduced optical absorption versus photoconductivity in hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;1980-01

4. Optical Characterization of Semiconductors;Nondestructive Evaluation of Semiconductor Materials and Devices;1979

5. Guided‐wave measurement of the 1.06‐μm two‐photon absorption coefficient in GaAs epitaxial layers;Journal of Applied Physics;1978-01

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