Author:
Haartman Martin von,Östling Mikael
Reference94 articles.
1. G. E. Moore, Cramming more components onto integrated circuits, Electronics 38 (1965).
2. P. H. Woerlee, M. J. Knitel, R. van Langevelde, D. B. M. Klaassen, L. F. Tiemeijer, A. J. Scholten, and A. T. A. Zegers-van Duijnhoven, RF-CMOS performance trends, IEEE Trans. Electron Devices
48, 1776-1782 (2001).
3. A. A. Abidi, RF CMOS comes of age, in Proc. Symp. VLSI Circuits, 2003, pp. 113-116.
4. J. L. Liou and F. Schwierz, RF MOSFET: recent advances, current status and future trends, Solid-State Electron.
47, 1881-1895 (2003).
5. H. S. Bennett, R. Brederlow, J. C. Costa, P. E. Cottrell, W. M. Huang, A. A. Immorlica, J.-E. Mueller, M. Racanelli, H. Shichijo, C. E. Weitzel, and B. Zhao, Device and technology evolution for Si-based RF integrated circuits, IEEE Trans. Electron Devices
52, 1235-1258 (2005).
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