Author:
Gaska R.,Asif Khan M.,Shur M. S.
Reference23 articles.
1. Bykhovski, B. Gelmont, and M. S. Shur, “The influence of the strain-induced electric field on the charge distribution in GaN-A1N-GaN SIS structure,” J. Appl. Phys.
74, pp. 6734–6739 (1993).
2. D. Bykhovski, B. L. Gelmont, and M. S. Shur, “Elastic Strain Relaxation in GaNA1N Superlattices,” in Proceedings of International Semiconductor Device Research Symposium (December 1995, Charlottesville, VA), Vol. II, pp. 541–544.
3. A. Bykhovski, B. Gelmont, and M. S. Shur, “Strain and charge distribution in GaNA1N-GaN SIS structure for arbitrary growth orientation,” Appl. Phys. Lett.
63, p. 2243 (1993).
4. Hetero-structures for High Performance Devices;MS Shur,2000
5. M. A. Khan, J. W. Yang, G. Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, A. Žukauskas, “Energy band/lattice mismatch engineering in quaternary AIInGaN/GaN heterostructure,” Phys. Stat. Sol. A
176, pp. 227–230 (1999).
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