DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products-Reference-Cited by-同舟云学术

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Published:1981-06 Issue:2 Volume:1 Page:201-215
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Wagner John J.,Brandt Werner W.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00564581.pdf

Reference19 articles.

1. J. J. Wagner and W. W. Brandt, Proc. Fourth International Symposium on Plasma Chemistry, Zürich, 1979, p. 120.

2. R. d'Agostino and D. L. Flamm,J. Appl. Phys.,52, 162 (1981).

3. G. Bruno, P. Capezzuto, F. Cramorossa, R. d'Agostino, and G. Latrofa, Proc. Fourth International Symposium on Plasma Chemistry, Zürich, 1979, p. 460.

4. K. M. Eisele,J. Electrochem. Soc. 128, 123 (1981).

5. A. J. Ahearn and N. B. Hannay,J. Chem. Phys. 21, 119 (1953).

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