Semi-polar GaN LEDs on Si substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-010-4182-2.pdf
Reference15 articles.
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2. Liu L, Edgar J H. Substrate for gallium nitride epitaxy. Mater Sci Eng R, 2002, 37: 61–127
3. Watanabe A, Takeuchi T, Hirosawa K, et al. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer. J Crystal Growth, 1993, 128: 391–396
4. Liu R, Ponce F A, Dadgar A, et al. Atomic arrangement at the AlN/Si (111) interface. Appl Phys Lett, 2003, 83: 860–862
5. Krost A, Dadgar A. GaN-based devices on Si. Phys Stat Sol (a), 2002, 194: 361–375
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