Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures
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Springer Science and Business Media LLC
Link
http://link.springer.com/content/pdf/10.1007/s11431-009-0023-6.pdf
Reference9 articles.
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2. Antonova I V, Kagan M S, Polyakov V I, et al. Effect of interface states on population of quantum wells in SiGe/Si structures. Phys Solid Stat, C, 2005, 2(6): 1924–1928
3. Zobl R, Gornik E, Altukhov I V, et al. Weak localization in SiGe quantum wells doped with boron. Mater Sci Forum, 2002, 384&385: 35–38
4. Antonova I V, Golik L L, Kagan M S, et al., Quantum well related conductivity and deep traps in SiGe/Si structures. Sol St Phenom, 2005, 108&109: 489–496
5. Antonova I V, Soots R A, Guliaev M B, et al. Electrical passivation of Si/SiGe/Si structures by 1-octadecene monolayers. Appl Phys Lett, 2007, 91: 102116
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