Author:
Wang TianQi,Xiao LiYi,Zhou Bin,Qi ChunHua
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference27 articles.
1. Amusan O A, Witulski A F, Massengill L W, et al. Charge collection and charge sharing in a 130 nm CMOS technology. IEEE Trans Nucl Sci, 2006, 53(6): 3253–3258
2. Giot D, Roche P, Gasiot G, et al. Heavy ion testing and 3D simulations of Multiple Cell Upset in 65nm standard SRAMs. IEEE RADECS 9th European Conference on, 2007. 1–6
3. Amusan O A, Massengill L W, Baze M P, et al. Single event upsets in Deep-Submicrometer technologies due to charge sharing. IEEE Trans Dev Mater Reliab, 2008, 8(3): 582–589
4. Lawrence R K, Kelly A T. Single event effect induced multiple-cell upsets in a commercial 90 nm CMOS digital technology. IEEE Trans Nucl Sci, 2008, 55(6): 3367–3374
5. Black J D, Ball D R, Robinson W H, et al. Characterizing SRAM single event upset in terms of single and multiple node charge collection. IEEE Trans Nucl Sci, 2008, 5(6): 2943–2947
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