Author:
Lu Frank,Lee Dong,Byrnes Dan,Armour Eric,Quinn William
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference11 articles.
1. Nakamura S, Sehoh M, Iwasa N, et al. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn J Appl Phys, 1995, 34:797–799
2. Nakamura S, Pearton S, Fasol G. The Blue Laser Diode: The Complete Story. 2nd. Heidelberg: Springer, 2000
3. Oliver R A, Kappers M J, McAleese C, et al. The origin and reduction of dislocations in gallium nitride. Mater Sci: Mater Electron, 2008, 19: 208–214
4. Pakula K, Baranowski J M, Borysiuk J, et al. Two- and three-dimensional growth modes of nitride layers. Cryst Res Technol, 2007, 42(12): 1176–1184
5. Dam C E C, Grzegorczyk A P, Hageman P R, et al. Method for HVPE growth of thick crack free GaN layers. J Cryst Growth, 2006, 290: 473–478
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献