Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

Author:

Sivanathan P.C.ORCID,Shuhaimi AhmadORCID,Hamza HebalORCID,Kowsz Stacy J.,Abdul Khudus Muhammad I.M.,Li Hongjian,Allif Kamarul

Funder

University of Malaya Research

Fundamental Research Grant Scheme

CREST Gallium Nitride on Gallium Nitride Collaboration

Ministry of Higher Education (MOHE) Long-Term Research Grant (LRGS)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Polarisation fields in III-nitrides: effects and control;Ren,2015

2. SiC, Sapphire and GaN Materials Status into Opto and RF Businesses;Roussel,2006

3. Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates;Lai;J. Appl. Phys.,2009

4. Low-dislocation-density GaN from a single growth on a textured substrate;Ashby;Appl. Phys. Lett.,2000

5. Recent progress in high-power blue-violet lasers;Uchida;IEEE J. Sel. Top. Quant. Electron.,2003

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