Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells-Reference-Cited by-同舟云学术

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Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells

Published:1986-12 Issue:4 Volume:41 Page:275-283
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Kr�hler W.,Kusian W.,Karg F.,Pfleiderer H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00616049.pdf

Reference23 articles.

1. S. Nakano, Y. Kishi, M. Ohnishi, S. Tsuda, H. Shibuya, N. Nakamura, Y. Hishikawa, H. Tarui, T. Takahama, Y. Kuwano: Mater. Res. Soc. Symp. Proc.49, 275 (1985)

2. S. Guha: J. Non-Cryst. Solids77 & 78, 1451 (1985)

3. W. Kusian, H. Pfleiderer, B. Bullemer: J. Non-Cryst. Solids77 & 78, 1489 (1985)

4. R.O. Bell: Appl. Phys. Lett.36, 936 (1980)

5. K. Hecht: Physik77, 235 (1932)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Trapping of Carriers in a-Si: H Solar Cells Studied by Transient Photocurrents;Physica Status Solidi (a);1989-07-16

2. On the Uniformity of Thin a-Si:H Films Prepared in an RF-Glow Discharge System;Japanese Journal of Applied Physics;1988-06-20

3. Undoped Amorphous Silicon TFTs with n-Channel OR p-Channel Device Operation for the Determination of the Gap States Distribution.;MRS Proceedings;1987

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