Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-012-5494-3.pdf
Reference29 articles.
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4. Ito M, Wada O, Nakai K, et al. Monolithic integration of a metal-semiconductor-metal photodiode and a GaAs preamplifier. IEEE Electron Device Lett, 1984, 5: 531–532
5. Borsa T, Williams D F, Hale P D, et al. Novel nano-structured metal-semiconductor-metal photodetector with high peak voltage. Jpn J Appl Phys, 2009, 48: 06FD031
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