Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-013-6027-4
Reference19 articles.
1. Pearton S J, Ren F, Zhang A P, et al. Fabrication and performance of GaN electronic devices. Mater Sci Eng Rep, 2000, 30: 55–212
2. Miyajima T, Tojyo T, Asano T, et al. GaN-based blue laser diodes. J Phys Cond Matter, 2001, 13: 7099–7114
3. Chu C F, Lai F I, Chu J T, et al. Study of GaN light-emitting diodes fabricated by laser lift-off technique. J Appl Phys, 2004, 95: 3916–3922
4. Wong W S, Kneissl M, Mei P, et al. Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates. Appl Phys Lett, 2001, 78: 1198–1200
5. Inoue S, Okamoto K, Matsuki N, et al. Epitaxial growth of GaN on copper substrates. Appl Phys Lett, 2006, 88: 261910
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1. Different structural origins for different sized surface pits observed on a-plane GaN film;Science China Technological Sciences;2015-11-04
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