Detecting the micro-defects in the GaAs materials by time resolved emissions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-014-0299-1.pdf
Reference19 articles.
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2. Yan W, Wang T, Li XM et al (2013) Tunable amplification and absorption properties in double-Λ system of GaAs/AlGaAs multiple quantum wells. Chin Sci Bull 58:53–58
3. Menzel F, Spemann D, Butz T (2011) High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing. Nucl Instrum Methods Phys Res B 269:2457–2461
4. Zhang ZY, Wang S, Peng LM (2012) High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits. Chin Sci Bull 57:135–148
5. Gfroerer TH, Hampton DG, Simov PR et al (2010) AX-type defects in zinc-doped GaAs1-x P x on GaAs. J Appl Phys 107:123719
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