Electrically active paramagnetic centres at Si-SiO2 interfaces-Reference-Cited by-同舟云学术

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Electrically active paramagnetic centres at Si-SiO2 interfaces

Published:1981-10 Issue:2 Volume:26 Page:87-92
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Mendz G.,Haneman D.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00616654.pdf

Reference34 articles.

1. G.Mendz, D.Haneman: J. Phys. C11, L197-L203 (1978)

2. G.Mendz, D.Haneman: J. Phys. C13, 6737?6760 (1980)

3. D.J.Lepine: Phys. Rev.B6, 436?441 (1972)

4. A.G.Revesz, B.Goldstein: Surf. Sci.14, 361?374 (1969)

5. Y.Nishi: Jpn. J. Appl. Phys.10, 52?62 (1971)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Space-Charge Layers at Semiconductor Interfaces;Crystalline Semiconducting Materials and Devices;1986

2. Characterization of the Si-SiO2 Interface;VLSI Electronics Microstructure Science;1985

3. Recent developments in ESR techniques and results for semiconductor surface regions;Progress in Surface Science;1984-01

4. Interface states at the SiO2-Si interface;Surface Science;1983-09

5. INTERFACE STATES AT THE SiO2–Si INTERFACE;Surfaces and Interfaces: Physics and Electronics;1983

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