2d Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources-Reference-Cited by-同舟云学术

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2d Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources

Published:2001 Issue: Volume: Page:136-139
ISSN:
Container-title:Simulation of Semiconductor Processes and Devices 2001
language:
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Author:

Deckert S.,Jungemann C.,NeinhÜs B.,Meinerzhagen B.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6244-6_30.pdf

Reference10 articles.

1. Goo JS et al., An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs. IEEE Trans. Elec. Dev. 2000; 47:2410–2419

2. Scholten AJ et al. Accurate Thermal Noise Model for Deep-Submicron CMOS. IEDM Tech. Dig. 1999;155–158

3. Klein P et al. An Analytical Thermal Noise Model of Deep Submicron MOSFET’s. IEEE Elec. Dev. Let. 1999;20:399–401

4. Donati S et al. Physics-Based RF Noise Modeling of Submicron MOSFETs IEDM Tech. Dig. 1998;81–84

5. Bonani F et al. An Efficient Approach to Noise Analysis Through Multidimensional Physics-Based Models. IEEE Trans. Elec. Dev. 1998;45:261–269

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