Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films-Reference-Cited by-同舟云学术

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Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films

Published:1993 Issue: Volume: Page:177-180
ISSN:
Container-title:Simulation of Semiconductor Devices and Processes
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Short-container-title:

Author:

Miura H.,Saito N.,Okamoto N.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6657-4_43.pdf

Reference5 articles.

1. S. M. Hu, J. Appl. Phys. vol. 70, (1991), R53.

2. H. Miura, et al., Appl. Phys. Lett., vol. 60, No. 22, (1992), 2746.

3. H. Miura, et al., Proc. Int. Workshop on VLSI Process and Device Modeling, Nara, Japan, (1993), 60.

4. N. Saito, et al., Proc. of the Int. Conf on Computational Engineering Science, Melbourne, Australia, (1991), 880.

5. H. Sakata, et al., Proc. of 9th Int. Conf. on Experimental Mechanics, vol. 3, (1990), 1307.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A ball-indentation method to evaluate the critical stress for dislocation generation in a silicon substrate;Fatigue & Fracture of Engineering Materials & Structures;2001-12-04

2. Internal Stress Change of Phosphorus-Doped Amorphous Silicon Thin Films During Crystallization;MRS Proceedings;1994

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