Three-Dimensional Monte Carlo Simulation of Submicronic Devices-Reference-Cited by-同舟云学术

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Three-Dimensional Monte Carlo Simulation of Submicronic Devices

Published:1993 Issue: Volume: Page:189-192
ISSN:
Container-title:Simulation of Semiconductor Devices and Processes
language:
Short-container-title:

Author:

Brisset C.,Dollfus P.,Chemarin N.,Castagné R.,Hesto P.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6657-4_46.pdf

Reference6 articles.

1. P. Dollfus, C. Bru, and P. Hesto, J.Appl.Phys., vol.73, p.804, 1993

2. L. Rajaonarison, P. Hesto, J.F. Pône, and P. Dollfus, Sisdep 91, vol.4, p.513, 1991

3. H. Sheng, R. Guerrieri, and A. Sangiovanni-Vincentelli Sisdep 91, vol.4, p.285, 1991

4. H.C. Chan, and T.J. Shieh, IEEE Trans. Electron Devices, vol.38,p.2427, 1993

5. H. Matsuo, J. Tanaka, A. Mishima, K. Tago, and T. Toyabe SISDEP 91, vol.4, p.165, 1991

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of magnetic-field-sensitive GaAs devices using 3D Monte Carlo simulation;Simulation of Semiconductor Devices and Processes;1995

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