Challenges to Achieving Accurate Three-Dimensional Process Simulation-Reference-Cited by-同舟云学术

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Challenges to Achieving Accurate Three-Dimensional Process Simulation

Published:1993 Issue: Volume: Page:1-8
ISSN:
Container-title:Simulation of Semiconductor Devices and Processes
language:
Short-container-title:

Author:

Law M. E.

Publisher

Springer Vienna

Link

http://link.springer.com/content/pdf/10.1007/978-3-7091-6657-4_1.pdf

Reference22 articles.

1. E.W. Scheckler and A.R. Neureuther, Numerical Analysis of Process and Devices Workshop, Seattle, p. 9, 1992.

2. J.J. Helmsen, E.W. Scheckler, A.R. Neureuther and C.H. Sequin, Numerical Analysis of Process and Devices Workshop, Seattle, p. 3, 1992.

3. J. Slinkmann, Private Communication.

4. R.W. Dutton and M.R. Pinto, Proceedings of the IEEE, 74 (12), 1986.

5. P.B. Griffin and J.D. Plummer, International Electron Devices Meeting, Los Angeles, p. 522, 1986.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D Process Simulation at IEMN/ISEN;3-Dimensional Process Simulation;1995

2. 3D TCAD at TU Vienna;3-Dimensional Process Simulation;1995

3. Mesh Generation for 3D Process Simulation and the Moving Boundary Problem;Simulation of Semiconductor Devices and Processes;1995

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