GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography-Reference-Cited by-同舟云学术

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GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Published:2016-05 Issue:3 Volume:12 Page:178-181
ISSN:1673-1905
Container-title:Optoelectronics Letters
language:en
Short-container-title:Optoelectron. Lett.

Author:

Sang Wei-hua,Lin Lu,Wang Long,Min Jia-hua,Zhu Jian-jun,Wang Min-rui

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11801-016-5251-y.pdf

Reference19 articles.

1. Fujii T., Gao Y., Sharma R., Hu E. L., DenBaars S. P. and Nakamura S., Applied Physics Letters 84, 855 (2004).

2. Nakada N., Nakaji M., Ishikawa H., Egawa T., Umeno M. and Jimbo T., Applied Physics Letters 76, 1804 (2000).

3. Guo Hao, Chen Hongjun, Zhang Xiong, Zhang Peiyuan, Liu Jianjun, Liu Honggang and Cui Yiping, Optical Engineering 52, 63402 (2013).

4. Kim Ja-Yeon, Kwon Min-Ki, Park Seong-Ju, Kim Sang Hoon and Lee Ki-Dong, Applied Physics Letters 96, 251103 (2010).

5. Tadatomo Kazuyuki, Okagawa Hiroaki, Ohuchi Youichiro, Tsunekawa Takashi, Imada Yoshiyuki, Kato Munehiro and Taguchi Tsunemasa, Japanese Journal of Applied Physics 40, L583 (2001).

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