?0.75 eV killer centre? in red-emitting GaP LEDs-Reference-Cited by-同舟云学术

?0.75 eV killer centre? in red-emitting GaP LEDs

Published:1983-12 Issue:4 Volume:32 Page:223-224
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Anwar Butt M.,Zafar Iqbal M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00820265.pdf

Reference6 articles.

1. A.R. Peaker, B. Hamilton, D.R. Wight, I.D. Blenkinsop, W. Harding, R. Gibb: Gallium arsenide and Related compounds 1976, Inst. Phys. Conf. Ser. No. 33a, p. 326 (1977)

2. See for example: C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch, Jr.: Solid State Electron,13, 759 (1970)

3. A. Mircea, D. Bois: Defects and radiation effects in semiconductors 1978, Inst. Phys. Conf. Ser. No. 46 p. 82 (1979)

4. R.M. Gibb, G.J. Rees, B.W. Thomas, B.L.H. Wilson, B. Hamilton, D.R. Wight, N.F. Mott: Philos. Mag.36, 1021 (1977)

5. B. Hamilton, A.R. Peaker, S. Bramwell, W. Harding, D.R. Wight: Appl. Phys. Lett.12, 702 (1975)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre;Applied Physics A;1986-06

2. gallium phosphide (GaP), energies and capture cross sections of hole traps;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.