Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures-Reference-Cited by-同舟云学术

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Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Published:1993-06 Issue:2 Volume:13 Page:333-350
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Chakrabarti U. K.,Pearton S. J.,Hobson W. S.,Abernathy C. R.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01466048.pdf

Reference23 articles.

1. D. C. Flanders, L. D. Pressman, and G. Pinelli,J. Vac. Sci. Technol. B 9, 1990 (1990).

2. S. J. Pearton, U. K. Chakrabarti, A. Katz, F. Ren, and T. R. Fullowan,Appl. Phys. Lett. 60, 838 (1992).

3. G. F. Doughty, S. Therms, V. Law, and C. D. W. Wilkinson,Vacuum 36, 803 (1986).

4. A. Scherer, B. P. van der Gaag, K. Kash, H. G. Craighead, and P. Grabbe,Mater. Res. Soc. Symp. 126, 245 (1988).

5. N. G. Chew and A. G. Cullis,Appl. Phys. Lett. 44, 142 (1984).

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1. REACTIVE ION ETCHING OF III–V SEMICONDUCTORS;International Journal of Modern Physics B;1994-06-30

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