Surface photovoltage measurement in MOS structures-Reference-Cited by-同舟云学术

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Surface photovoltage measurement in MOS structures

Published:1987-10 Issue:2 Volume:44 Page:191-194
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Pater K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00626422.pdf

Reference19 articles.

1. A. Many, Y. Goldstein, N.B. Grover:Semiconductors Surfaces (North-Holland, Amsterdam 1971)

2. A.W. Rzanov:Elektronny je processy na povierkhnosti poluprovodnikhov (Nauka, Moskva 1971)

3. W.A. Zujev, A.W. Satchienko, W.A. Olejnik, W.G. Popov: Ukr. Fiz. Zh.19, 453 (1974)

4. A.Y. Vul, K.V. Sanin, W.I. Fedorov: Pisma Zh. Technol. Fiz.5, 930 (1979)

5. L.G. Meiners: Thin Solid Films56, 201 (1979)

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1. Acoustoelectric Effect in Semiconductor Structures - Tool for Interface States Investigation by Complex Acoustic Spectroscopy;Acta Acustica united with Acustica;2016-07-01

2. Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors;Communications - Scientific letters of the University of Zilina;2003-06-30

3. Acoustic Deep-Level Transient Spectroscopy of MIS Structures;Physica Status Solidi (a);1991-07-16

4. Silicon work function in AlSiO2Si system;Surface Science;1988-07

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