On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon-Reference-Cited by-同舟云学术

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On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

Published:1994-06 Issue:6 Volume:58 Page:541-549
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Vanhellemont J.,Romano-Rodr�guez A.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00348164.pdf

Reference28 articles.

1. L.M. Brown, D. Fathy: Philos. Mag. B 43, 715 (1981)

2. A. Aseev, L. Fedina, D. H�hl, H. Bartsch: Solid State Phenom. 6/7, 235 (1989)

3. L.I. Fedina, A.L. Aseev: Sov. Phys. Solid State 32, 33 (1990)

4. A.L. Aseev, S.G. Denisenko, L.I. Fedina: Sov. Phys. Semicond. 25, 352 (1991)

5. A.L. Aseev, L.I. Fedina, D. H�hl, H. Bartsch: Clusters of Interstitial Atoms in Silicon and Germanium (Nauka, Novosibirsk 1991) (in Russian)

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1. In situUHVEM study of {113}-defect formation in Si nanowires;Semiconductor Science and Technology;2015-10-15

2. Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM;physica status solidi (c);2015-05-13

3. In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures;physica status solidi (c);2015-02-09

4. Ultra High Voltage Electron Microscopy Study of {113}-Defect Generation in Si Nanowires;MRS Proceedings;2014

5. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si;physica status solidi (a);2012-07-23

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