Author:
Lee Jaewon,Hwang Jin-Ha,Lee Sang Won,Park Seungho,Shin Seungwon,Chung Haseung
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Mechanical Engineering
Reference13 articles.
1. Sera, K., Okumura, F., Uchida, H., Itoh, S., Karelso, S. and Hotta, K., “High-performance TFTs Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-silicon Film,” IEEE Trans. Electron Devices, Vol. 36, No. 12, pp. 2868–2872, 1989.
2. Crowder, M. A., Garey, P. G., Smith, P. M., Sposili, R. S., Cho, H. S. and Im, J. S., “Low-temperature Single-crystal Si TFT’s Fabricated on Si Films Processed Via Sequential Lateral Solidification,” IEEE Trans. Electron Devices, Vol. 19, No. 8, pp. 306–308, 1998.
3. Yamamoto, M., Nishitani, H., Sakai, M., Goto, M., Taketomi, Y., Tsutsu, H. and Nishitani, M., “High Performance Low Temperature Poly-Si TFT Obtained by a New Fabrication Method,” Proceedings of Euro Display, p. 53, 1999.
4. Ibok, E. and Garg, S., “A Characterization of the Effect of Deposition Temperature on Polysilicon Properties,” J. Electrochem. Soc., Vol. 140, No. 10, pp. 2927–2937, 1993.
5. Lee, S. W. and Joo, S. K., “Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization,” IEEE Electron Device Letters, Vol. 17, No. 4, pp. 160–162, 1996.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献