Heavy ion-induced single event upset sensitivity evaluation of 3D integrated static random access memory-Reference-Cited by-同舟云学术

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Heavy ion-induced single event upset sensitivity evaluation of 3D integrated static random access memory

Published:2018-02-19 Issue:3 Volume:29 Page:
ISSN:1001-8042
Container-title:Nuclear Science and Techniques
language:en
Short-container-title:NUCL SCI TECH

Author:

Cao Xue-Bing,Xiao Li-Yi,Huo Ming-Xue,Wang Tian-Qi,Liu Shan-Shan,Qi Chun-Hua,Li An-Long,Wang Jin-Xiang

Publisher

Springer Science and Business Media LLC

Subject

Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://link.springer.com/article/10.1007/s41365-018-0377-1/fulltext.html

Reference22 articles.

1. B. Gill, N. Seifert, V. Zia, Comparison of alpha-particle and neutron-induced combinational and sequential logic error rates at the 32 nm technology node, in The 2009 IEEE International Reliability Physics Symposium, Montreal, Canada, April 26–30 (2009), pp. 199–205. https://doi.org/10.1109/irps.2009.5173251

2. A. Kaouache, F. Wrobel, F. Saigne et al., Analytical method to evaluate soft error rate due to alpha contamination. IEEE Trans. Nucl. Sci. 60, 4059–4066 (2013). https://doi.org/10.1109/TNS.2013.2285401

3. J.L. Autran, S. Serre, S. Semikh et al., Soft-error rate induced by thermal and low energy neutrons in 40 nm SRAMs. IEEE Trans. Nucl. Sci. 59, 2658–2665 (2012). https://doi.org/10.1109/TNS.2012.2222438

4. C. Geng, J. Liu, Z.G. Zhang et al., Simulation of the characteristics of low-energy proton induced single event upset. Sci. China Ser. G Phys. Mech. Astron. 57, 1902–1906 (2014). https://doi.org/10.1007/s11433-014-5414-4

5. Y.P. Fang, A.S. Oates, Muon-induced soft errors in SRAM circuits in the terrestrial environment. IEEE Trans. Device Mater. Reliab. 15, 115–122 (2015). https://doi.org/10.1109/TDMR.2015.2396673

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