Dielectric Breakdown of Microelectronic and Nanoelectronic Devices

Author:

Wang Biao

Publisher

Springer Berlin Heidelberg

Reference147 articles.

1. Agnello, S., Boscaino, R., Buscarino, G., Cannas, M., Gelardi, F.M.: Structural relaxation of Eψ′ centers in amorphous silica. Phys. Rev. B 66, 113201 (2002)

2. Alam, M., Weir, B., Bude, J., Silverman, P., Ghetti, A.: A computational model for oxide breakdown: theory and experiments. Microelectron. Eng. 59, 137–147 (2001)

3. Alam, M.A., Bude, J., Ghetti, A.: Field acceleration for oxide breakdown— can an accurate anode hole injection model resolve the E vs. 1/E controversy? Reliability Physics Symposium, 2000, Proceedings 38th Annual 2000 IEEE International, pp. 21–26

4. Alam, M.A., Bude, J., Weir, B., Silverman, P., Ghetti, A., Monroe, D., Cheung, K.P., Moccio, S.: An anode hole injection percolation model for oxide breakdown-the “Doomsday” scenario revisited. Electron Devices Meeting, 1999. IEDM Technical Digest, International, pp. 715–718

5. Alam, M.A., Weir, B.E. Silverman, P.J.: A study of soft and hard breakdown-Part I: Analysis of statistical percolation conductance. IEEE Transa. Electron Dev. 49, 232–238 (2002)

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