Publisher
Springer Berlin Heidelberg
Reference21 articles.
1. Ackermann, G.K., Kröll, K.: Threshold voltage of narrow channel field effect transistors. Solid state electronic Vol. 19, S. 77–81, 1976
2. Baier, E., Clemen, R., Haug, W., Fischer, W., Müller, R., Löhlein, W., Barsuhn, H.: A 256 K NMOS DRAM. IEEE Digest of Technical Papers, S. 274-275, 1984
3. Baitinger, K.G., Remshardt, R.: A high performance low power 1048-Bit memory in Mosfet Technology and its application. IEEE J. Solid State Circuits SC 11, S. 352–359, 1976
4. Berger, H., Wiedmann, S.K.: Small Size, Low-Power bipolar memory cell. ISSCC Digest of Technical Papers XIV, S. 18–19, 1971
5. Berger, H., Wiedmann, S.K.: Merged Transistor Logic — A low cost bipolar concept. ISSCC Digest of Technical Papers 15, S. 90–91, 1972