Threshold voltage of narrow channel field effect transistors-Reference-Cited by-同舟云学术

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Threshold voltage of narrow channel field effect transistors

Published:1976-01 Issue:1 Volume:19 Page:77-81
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kroell Karl E.,Ackermann Gerhard K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Int. Electron Device Meeting;Dennard,1972

2. Subthreshold design considerations for insulated gate field-effect transistors

3. European Solid State Device Research Conference (ESSDERC);Kroell,1973

4. Physics of Semiconductor Devices;Sze,1969

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