SiGe Heterojunction Bipolar Transistors-Reference-Cited by-同舟云学术

SiGe Heterojunction Bipolar Transistors

Published:1994 Issue: Volume: Page:149-192
ISSN:0172-5734
Container-title:Springer Series in Electronics and Photonics
language:
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Author:

Gruhle A.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-79031-7_4.pdf

Reference80 articles.

1. T. Ishibashi, O. Nakajima, J. Nagata, Y. Yamauchi, H. Ito: Ultra-high-speed AlGaAs/GaAs HBTs. IEDM 88, 826–829 (1988)

2. W.J. Ho, N.L. Wang, M.F. Chang, A. Sailer, J.A. Higgins: Self-alignment AlGaAs/GaAs HBT with extrapolated maximum oscillation frequency of 350 GHz. DRC’ 92, IVA-1 (1992)

3. A. Gruhle, H. Kibbel, U. Erben, E. Kasper: 91 GHz SiGe HBTs grown by MBE. Electr. Lett. 29, 415–416 (1993)

4. H. Schumacher, U. Erben, A. Gruhle: Noise characterisation of SiGe HBTs at microwave frequencies. Electr. Lett. 28, 1167–1168 (1992)

5. D.L. Harame, E.F. Crabbé, J.D. Cressler, J.H. Comfort: A high performance epitaxial SiGe-base ECL BICMOS technology. IEDM 92, 19–22 (1992)

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