Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers-Reference-Cited by-同舟云学术

Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers

Published:1992 Issue: Volume: Page:143-148
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
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Author:

Suttrop W.,Zhang H.,Schadt M.,Pensl G.,Dohnke K.,Leibenzeder S.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-84804-9_20.pdf

Reference9 articles.

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2. Tajima, Y., Kijima, K., Kingery, W. D.: J. Chem. Phys. 77 (1982) 2592

3. Marsh, O. J., in: Silicon Carbide 1973, Ed. R. C. Marshall, J. W. Faust, Jr., C. E. Ryan, University of South Carolina Press, Columbia (1973), p. 471

4. Wood, S., Spitznagel, J. A., Choyke, W. J., Bradshaw, J., Greggi, J., Jr.,. Doyle, N. J.: Mat. Res. Soc. Symp. Proc. 60 (1986) 459

5. Edmond, J. A., Withrow, S. P., Wadlin, W., Davis, R. F.: Mat. Res. Soc. Symp. Proc. 77 (1987) 193

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