Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC

Author:

Shor J. S.,Zhang X. G.,Kurtz A. D.,Osgood R. M.

Publisher

Springer Berlin Heidelberg

Reference14 articles.

1. “SiC 1973 ” edited by R.C. Marshall, J.W. Faust and C.E. Ryan., Univ. of S. Carolina Press, p. 666

2. J.W. Palmour, R.F. Davis, P. Astell-Burt, and P. Blackborow., in “ Science and Technology of Microfabrication ” ed. by R.E. Howard, E.L. Hu, S. Namba and S.W. Pang., (Mat. Res. Soc., Pittsburg, 1987 ) p. 185.

3. J.S. Shor, D. Goldstein, and A.D. Kurtz., in “Transducers 91’ Digest of Technical Papers” p. 912–916 (IEEE Press, 1991 ).

4. K.C. Lee.,: J. Electrochem. Soc. 137, 2556 (1991)

5. M.M. Carrabba, J. Li, J.P. Hachey, R.D. Rauh and Y. Wang.,: Electrochem. Soc. Extended Abstracts 89–1 (1989) p. 727.

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1. Wet etching of GaN, AlN, and SiC: a review;Materials Science and Engineering: R: Reports;2005-01

2. A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates;Sensors and Actuators A: Physical;1999-04

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