1. The HBT work of the CNET was also partly supported by an Espritl programme.
2. see for instance: P.J. Zdebel, “Current status of high performance silicon bipolar technology”, GaAs IC Symposium 92, technical digest p. 15.
3. E. Crabbé et al, “113 GHz fT graded-base SiGe HBTs” and A. Gruhle et al., “Base Thickness and High Frequency Performances of SiGe HBTs”, both contributions at the 51st Annual Device Research Conference, 1993 (unpublished).
4. see for instance: Hidenori Shimawaki et al, “High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions”, ibid.
5. S.Delage et al, “First microwave characterization of LP-MOCVD grown GalnP/GaAs self-aligned HBT”, Electronics Letters, 1991, vol. 27, p. 253.