Self-limiting etching prior to self-limiting growth in ultra-high vacuum for obtaining clean interface-Reference-Cited by-同舟云学术

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Self-limiting etching prior to self-limiting growth in ultra-high vacuum for obtaining clean interface

Published:2001 Issue: Volume: Page:351-352
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
language:
Short-container-title:

Author:

Otsuka N.,Nishizawa J.,Oyama Y.,Kikuchi H.,Suto K.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-59484-7_162.pdf

Reference5 articles.

1. T. Suntola and J. Antson, Finnish Patent No. 52395 (1974) and US Patent No. 4058430 (1977).

2. J. Nishizawa and Y. Kokubun, in Ext. Abstr. 16th Conference on Solid State Device and Materials (1984), p. 1.

3. N. Otsuka, J. Nishizawa, Y. Oyama, H. Kikuchi, and K. Suto, Jpn. J. Appl. Phys. 38 (1999) 2529.

4. N. Otsuka, J. Nishizawa, H. Kikuchi, and Y. Oyama, J. Vac. Sci. Technol. A17 (1999) 3008.

5. A. J. SpringThorpe, W. T. Moore, A. Majeed and R. W. Steater, J. Vac. Sci. Technol. B11 (1993) 127.

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