Applications
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-55900-6_8
Reference55 articles.
1. J.D. Cressler. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications. IEEE Trans. Microwave Theory Tech., 46(5):572–589, 1998.
2. D.K. Lynn, C.S. Meyer, D.J. Hamilton. Analysis and Design of Integrated Circuits. McGraw-Hill, New York, 1967.
3. H.H. Mül ler, W.K. Owens, P.W.J. Verhofstadt. Fully compensated emitter-coupled logic: eliminating the drawbacks of conventional ECL. IEEE J. Solid-State Circuits, 8(5):362–367, 1973.
4. H.Y. Hsieh, K. Chin, C.-T. Chuang. Power partition and emitter size optimization for bipolar ECL circuits. IEEE J. Solid-State Circuits, 28(5):548–552, 1993.
5. J.M. McGregor, D.J. Roulston, J.S. Hamel, M. Vaidyanathan, S.C. Jain, P. Balk. A simple expression for ECL propagation delay including non-quasi-static effects. Solid-State Electron., 36(3):391–396, 1993.
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