Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation “Sandwich Method”-Reference-Cited by-同舟云学术

Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation “Sandwich Method”

Published:1992 Issue: Volume: Page:329-334
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
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Author:

Vodakov Yu. A.,Mokhov E. N.,Ramm M. G.,Roenkov A. D.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-84402-7_50.pdf

Reference10 articles.

1. Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm, A.D. Roenkov// Krist und Techn., I4, 729 (1979).

2. E.N. Mokhov, I.L. Shulgina, A.S. Tregubova, Yu.A. Vodakov // Cryst.Res. and Techn., I6, 879 (1981).

3. E.N. Mokhov, R.G. Verenchikova, Yu.A. Vodakov, E.E. Goncharov, G.A. Lomakina, V.G. Oding, M.G. Ramm, A.D. Roenkov, G.G. Ryabova: in Doped Semiconductor Materials, ed. by V.S. Zemslov (Nauka, Moscow, 1985) p. 45.

4. V.F. Dorfman // Crystallography (USSR), I3, 140 (1968).

5. A.G. Zabrodsky, G.A. Lomakina, E.N. Mokhov: in Sixth All-Union Conference on Physical and Chemical Fundamentals of Doping Semiconductor Materials. Abstract of Reports (Nauka, Moscow, 1988) p. 38.

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